IXTQ200N06P Pricing (USD) [13616PC Stock]
- 1 pcs$3.34584
- 30 pcs$3.32919
- Nimewo Pati:
- IXTQ200N06P
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 60V 200A TO-3P.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - RF, Transistors - Objektif espesyal, Modil pouvwa chofè, Diodes - Zener - Single, Transistors - Pwogramasyon Unijunction and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in IXYS IXTQ200N06P electronic components. IXTQ200N06P can be shipped within 24 hours after order. If you have any demands for IXTQ200N06P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTQ200N06P Atribi pwodwi yo
Nimewo Pati :
IXTQ200N06P
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 60V 200A TO-3P
Seri :
PolarHT™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
200A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
5 mOhm @ 400A, 15V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
200nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
5400pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
714W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-3P
Pake / Ka :
TO-3P-3, SC-65-3
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