ON Semiconductor - NDBA170N06AT4H

KEY Part #: K6402374

[2726PC Stock]


    Nimewo Pati:
    NDBA170N06AT4H
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET N-CH 60V 170A DPAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Single, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays and Transistors - FETs, MOSFETs - Single ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor NDBA170N06AT4H electronic components. NDBA170N06AT4H can be shipped within 24 hours after order. If you have any demands for NDBA170N06AT4H, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    NDBA170N06AT4H Atribi pwodwi yo

    Nimewo Pati : NDBA170N06AT4H
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET N-CH 60V 170A DPAK
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 60V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 170A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 3.3 mOhm @ 50A, 10V
    Vgs (th) (Max) @ Id : 2.6V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : 280nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 15800pF @ 20V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 90W (Tc)
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : D²PAK (TO-263)
    Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB