FGH25N120FTDS Pricing (USD) [11882PC Stock]
- 1 pcs$3.46831
- Nimewo Pati:
- FGH25N120FTDS
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- IGBT 1200V 50A 313W TO247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - RF, Transistors - Objektif espesyal, Diodes - Zener - Arrays and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FGH25N120FTDS electronic components. FGH25N120FTDS can be shipped within 24 hours after order. If you have any demands for FGH25N120FTDS, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FGH25N120FTDS Atribi pwodwi yo
Nimewo Pati :
FGH25N120FTDS
Manifakti :
ON Semiconductor
Deskripsyon :
IGBT 1200V 50A 313W TO247
Seri :
-
Estati Pati :
Active
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
50A
Kouran - Pèseptè batman (Icm) :
75A
Vce (sou) (Max) @ Vge, Ic :
2V @ 15V, 25A
Pouvwa - Max :
313W
Oblije chanje enèji :
1.42mJ (on), 1.16mJ (off)
Kalite Antre :
Standard
Gate chaje :
169nC
Td (on / off) @ 25 ° C :
26ns/151ns
Kondisyon egzamen an :
600V, 25A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
535ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
TO-247
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