ON Semiconductor - FGH25N120FTDS

KEY Part #: K6421740

FGH25N120FTDS Pricing (USD) [11882PC Stock]

  • 1 pcs$3.46831

Nimewo Pati:
FGH25N120FTDS
Manifakti:
ON Semiconductor
Detaye deskripsyon:
IGBT 1200V 50A 313W TO247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Single, Transistors - Objektif espesyal, Modil pouvwa chofè, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single and Transistors - IGBTs - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FGH25N120FTDS Atribi pwodwi yo

Nimewo Pati : FGH25N120FTDS
Manifakti : ON Semiconductor
Deskripsyon : IGBT 1200V 50A 313W TO247
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 50A
Kouran - Pèseptè batman (Icm) : 75A
Vce (sou) (Max) @ Vge, Ic : 2V @ 15V, 25A
Pouvwa - Max : 313W
Oblije chanje enèji : 1.42mJ (on), 1.16mJ (off)
Kalite Antre : Standard
Gate chaje : 169nC
Td (on / off) @ 25 ° C : 26ns/151ns
Kondisyon egzamen an : 600V, 25A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : 535ns
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247