TK39J60W,S1VQ Pricing (USD) [9590PC Stock]
- 1 pcs$4.72871
- 25 pcs$3.87569
- 100 pcs$3.49762
- 500 pcs$2.93043
- Nimewo Pati:
- TK39J60W,S1VQ
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 600V 38.8A TO-3P.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Single, Modil pouvwa chofè, Transistors - IGBTs - Modil yo, Diodes - RF and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TK39J60W,S1VQ electronic components. TK39J60W,S1VQ can be shipped within 24 hours after order. If you have any demands for TK39J60W,S1VQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK39J60W,S1VQ Atribi pwodwi yo
Nimewo Pati :
TK39J60W,S1VQ
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 600V 38.8A TO-3P
Seri :
DTMOSIV
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
38.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
65 mOhm @ 19.4A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 1.9mA
Chaje Gate (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
4100pF @ 300V
Karakteristik FET :
Super Junction
Disipasyon Pouvwa (Max) :
270W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-3P(N)
Pake / Ka :
TO-3P-3, SC-65-3
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