Infineon Technologies - IPD122N10N3GATMA1

KEY Part #: K6420180

IPD122N10N3GATMA1 Pricing (USD) [167525PC Stock]

  • 1 pcs$0.22079
  • 2,500 pcs$0.21190

Nimewo Pati:
IPD122N10N3GATMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 100V 59A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs, Transistors - JFETs, Diodes - Rèkteur - Arrays and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
We specialize in Infineon Technologies IPD122N10N3GATMA1 electronic components. IPD122N10N3GATMA1 can be shipped within 24 hours after order. If you have any demands for IPD122N10N3GATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD122N10N3GATMA1 Atribi pwodwi yo

Nimewo Pati : IPD122N10N3GATMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 100V 59A
Seri : OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 59A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V
RD sou (Max) @ Id, Vgs : 12.2 mOhm @ 46A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 46µA
Chaje Gate (Qg) (Max) @ Vgs : 35nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2500pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 94W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-TO252-3
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

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