Nimewo Pati :
IPD122N10N3GATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 100V 59A
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
59A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
12.2 mOhm @ 46A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 46µA
Chaje Gate (Qg) (Max) @ Vgs :
35nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
2500pF @ 50V
Disipasyon Pouvwa (Max) :
94W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TO252-3
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63