Diodes Incorporated - DMN3052L-7

KEY Part #: K6413110

[13213PC Stock]


    Nimewo Pati:
    DMN3052L-7
    Manifakti:
    Diodes Incorporated
    Detaye deskripsyon:
    MOSFET N-CH 30V 5.4A SOT23-3.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays and Transistors - FETs, MOSFETs - RF ...
    Avantaj konpetitif:
    We specialize in Diodes Incorporated DMN3052L-7 electronic components. DMN3052L-7 can be shipped within 24 hours after order. If you have any demands for DMN3052L-7, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    DMN3052L-7 Atribi pwodwi yo

    Nimewo Pati : DMN3052L-7
    Manifakti : Diodes Incorporated
    Deskripsyon : MOSFET N-CH 30V 5.4A SOT23-3
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.4A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 2V, 10V
    RD sou (Max) @ Id, Vgs : 32 mOhm @ 5.8A, 10V
    Vgs (th) (Max) @ Id : 1.2V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : -
    Vgs (Max) : ±12V
    Antre kapasite (Ciss) (Max) @ Vds : 555pF @ 5V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 1.4W (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : SOT-23-3
    Pake / Ka : TO-236-3, SC-59, SOT-23-3