[12321PC Stock]
- Nimewo Pati:
- STN2NE10L
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 100V 1.8A SOT-223.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Single, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Modil yo and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STN2NE10L electronic components. STN2NE10L can be shipped within 24 hours after order. If you have any demands for STN2NE10L, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STN2NE10L Atribi pwodwi yo
Nimewo Pati :
STN2NE10L
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 100V 1.8A SOT-223
Seri :
STripFET™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V, 10V
RD sou (Max) @ Id, Vgs :
400 mOhm @ 1A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
14nC @ 5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
345pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.5W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-223
Pake / Ka :
TO-261-4, TO-261AA
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