Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 100V 4.2A DPAK-3
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.2A (Ta), 5.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
104 mOhm @ 4.2A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
6nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
285pF @ 50V
Disipasyon Pouvwa (Max) :
3.1W (Ta), 29W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D-PAK (TO-252)
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63