ON Semiconductor - FDD86113LZ

KEY Part #: K6415759

FDD86113LZ Pricing (USD) [159974PC Stock]

  • 1 pcs$0.23121
  • 2,500 pcs$0.22536

Nimewo Pati:
FDD86113LZ
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 100V 4.2A DPAK-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - Objektif espesyal, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Single, Tiristors - TRIACs, Diodes - Zener - Single, Diodes - Varyab kapasite (Varicaps, Varactors) and Diodes - RF ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDD86113LZ electronic components. FDD86113LZ can be shipped within 24 hours after order. If you have any demands for FDD86113LZ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDD86113LZ Atribi pwodwi yo

Nimewo Pati : FDD86113LZ
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 100V 4.2A DPAK-3
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.2A (Ta), 5.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 104 mOhm @ 4.2A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 6nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 285pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.1W (Ta), 29W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D-PAK (TO-252)
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63