FCH060N80-F155 Pricing (USD) [8984PC Stock]
- 1 pcs$4.58718
- Nimewo Pati:
- FCH060N80-F155
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 800V 56A TO247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR - Modil yo, Diodes - Rèkteur - Single, Diodes - Zener - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Modil yo and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FCH060N80-F155 electronic components. FCH060N80-F155 can be shipped within 24 hours after order. If you have any demands for FCH060N80-F155, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FCH060N80-F155 Atribi pwodwi yo
Nimewo Pati :
FCH060N80-F155
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 800V 56A TO247
Seri :
SuperFET® II
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
56A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
60 mOhm @ 29A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 5.8mA
Chaje Gate (Qg) (Max) @ Vgs :
350nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
14685pF @ 100V
Karakteristik FET :
Super Junction
Disipasyon Pouvwa (Max) :
500W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247 Long Leads
Pake / Ka :
TO-247-3
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