Vishay Siliconix - IRFI520GPBF

KEY Part #: K6398609

IRFI520GPBF Pricing (USD) [53136PC Stock]

  • 1 pcs$0.73586
  • 10 pcs$0.66562
  • 100 pcs$0.53500
  • 500 pcs$0.41610
  • 1,000 pcs$0.32614

Nimewo Pati:
IRFI520GPBF
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 100V 7.2A TO220FP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Arrays, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in Vishay Siliconix IRFI520GPBF electronic components. IRFI520GPBF can be shipped within 24 hours after order. If you have any demands for IRFI520GPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFI520GPBF Atribi pwodwi yo

Nimewo Pati : IRFI520GPBF
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 100V 7.2A TO220FP
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7.2A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 270 mOhm @ 4.3A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 16nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 360pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 37W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220-3
Pake / Ka : TO-220-3 Full Pack, Isolated Tab

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