Renesas Electronics America - RJK5015DPM-00#T1

KEY Part #: K6403987

RJK5015DPM-00#T1 Pricing (USD) [2168PC Stock]

  • 1 pcs$3.03642

Nimewo Pati:
RJK5015DPM-00#T1
Manifakti:
Renesas Electronics America
Detaye deskripsyon:
MOSFET N-CH 500V 25A TO3PFM.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - RF, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Arrays, Modil pouvwa chofè, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in Renesas Electronics America RJK5015DPM-00#T1 electronic components. RJK5015DPM-00#T1 can be shipped within 24 hours after order. If you have any demands for RJK5015DPM-00#T1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RJK5015DPM-00#T1 Atribi pwodwi yo

Nimewo Pati : RJK5015DPM-00#T1
Manifakti : Renesas Electronics America
Deskripsyon : MOSFET N-CH 500V 25A TO3PFM
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 25A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 240 mOhm @ 12.5A, 10V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : 66nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 2600pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 60W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-3PFM
Pake / Ka : TO-3PFM, SC-93-3

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