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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NVB25P06T4G

ON Semiconductor - NVB25P06T4G

KEY Part #: K6400934

NVB25P06T4G Pricing (USD) [3226PC Stock]

  • 800 pcs$0.46950
Nimewo Pati:
NVB25P06T4G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET P-CH 60V 27.5A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - Pwogramasyon Unijunction, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Bridge rèktifikateur, Transistors - IGBTs - Single, Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in ON Semiconductor NVB25P06T4G electronic components. NVB25P06T4G can be shipped within 24 hours after order. If you have any demands for NVB25P06T4G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVB25P06T4G Atribi pwodwi yo

Nimewo Pati : NVB25P06T4G
Manifakti : ON Semiconductor
Deskripsyon : MOSFET P-CH 60V 27.5A D2PAK
Seri : -
Estati Pati : Obsolete
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 27.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 82 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 50nC @ 10V
Vgs (Max) : ±15V
Antre kapasite (Ciss) (Max) @ Vds : 1680pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 120W (Tj)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D2PAK
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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