Diodes Incorporated - DMN3013LFG-13

KEY Part #: K6522290

DMN3013LFG-13 Pricing (USD) [257668PC Stock]

  • 1 pcs$0.14355

Nimewo Pati:
DMN3013LFG-13
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET BVDSS 25V-30V POWERDI333.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single, Transistors - IGBTs - Single, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs, Tiristors - SCR and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMN3013LFG-13 electronic components. DMN3013LFG-13 can be shipped within 24 hours after order. If you have any demands for DMN3013LFG-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN3013LFG-13 Atribi pwodwi yo

Nimewo Pati : DMN3013LFG-13
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET BVDSS 25V-30V POWERDI333
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9.5A (Ta), 15A (Tc)
RD sou (Max) @ Id, Vgs : 14.3 mOhm @ 4A, 8V
Vgs (th) (Max) @ Id : 1.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 5.7nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds : 600pF @ 15V
Pouvwa - Max : 2.16W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-PowerLDFN
Pake Aparèy Founisè : PowerDI3333-8

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