[1448PC Stock]
- Nimewo Pati:
- SI5475DC-T1-E3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET P-CH 12V 5.5A 1206-8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI5475DC-T1-E3 electronic components. SI5475DC-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI5475DC-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI5475DC-T1-E3 Atribi pwodwi yo
Nimewo Pati :
SI5475DC-T1-E3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 12V 5.5A 1206-8
Seri :
TrenchFET®
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
31 mOhm @ 5.5A, 4.5V
Vgs (th) (Max) @ Id :
450mV @ 1mA (Min)
Chaje Gate (Qg) (Max) @ Vgs :
29nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
-
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.3W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
1206-8 ChipFET™
Pake / Ka :
8-SMD, Flat Lead
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