IPB019N08N3GATMA1 Pricing (USD) [28343PC Stock]
- 1 pcs$1.45407
- Nimewo Pati:
- IPB019N08N3GATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 80V 180A TO263-7.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Modil pouvwa chofè, Diodes - Zener - Arrays, Transistors - IGBTs - Single, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Single and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPB019N08N3GATMA1 electronic components. IPB019N08N3GATMA1 can be shipped within 24 hours after order. If you have any demands for IPB019N08N3GATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB019N08N3GATMA1 Atribi pwodwi yo
Nimewo Pati :
IPB019N08N3GATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 80V 180A TO263-7
Seri :
OptiMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
180A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
1.9 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 270µA
Chaje Gate (Qg) (Max) @ Vgs :
206nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
14200pF @ 40V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
300W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TO263-7
Pake / Ka :
TO-263-7, D²Pak (6 Leads + Tab)
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