SIHD7N60ET4-GE3 Pricing (USD) [103515PC Stock]
- 1 pcs$0.37773
- Nimewo Pati:
- SIHD7N60ET4-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 600V 7A TO252AA.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Transistors - Pwogramasyon Unijunction, Modil pouvwa chofè, Transistors - FETs, MOSFETs - Single, Tiristors - SCR and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SIHD7N60ET4-GE3 electronic components. SIHD7N60ET4-GE3 can be shipped within 24 hours after order. If you have any demands for SIHD7N60ET4-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHD7N60ET4-GE3 Atribi pwodwi yo
Nimewo Pati :
SIHD7N60ET4-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 600V 7A TO252AA
Seri :
E
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
600 mOhm @ 3.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
40nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
680pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
78W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-252AA
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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