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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. 2N7002 BK

Central Semiconductor Corp - 2N7002 BK

KEY Part #: K6402330

2N7002 BK Pricing (USD) [2742PC Stock]

  • 10,500 pcs$0.03999
Nimewo Pati:
2N7002 BK
Manifakti:
Central Semiconductor Corp
Detaye deskripsyon:
MOSFET N-CH 60V 0.115A SOT-23.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Tiristors - TRIACs, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Transistors - Pwogramasyon Unijunction and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in Central Semiconductor Corp 2N7002 BK electronic components. 2N7002 BK can be shipped within 24 hours after order. If you have any demands for 2N7002 BK, Please submit a Request for Quotation here or send us an email:
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ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

2N7002 BK Atribi pwodwi yo

Nimewo Pati : 2N7002 BK
Manifakti : Central Semiconductor Corp
Deskripsyon : MOSFET N-CH 60V 0.115A SOT-23
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 115mA (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V
RD sou (Max) @ Id, Vgs : 7.5 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 0.59nC @ 4.5V
Vgs (Max) : 40V
Antre kapasite (Ciss) (Max) @ Vds : 50pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 350mW (Ta)
Operating Tanperati : -65°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-23
Pake / Ka : TO-236-3, SC-59, SOT-23-3
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