NXP USA Inc. - PMR290UNE,115

KEY Part #: K6403890

[2201PC Stock]


    Nimewo Pati:
    PMR290UNE,115
    Manifakti:
    NXP USA Inc.
    Detaye deskripsyon:
    MOSFET N-CH 20V 700MA SC-75.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Single and Diodes - RF ...
    Avantaj konpetitif:
    We specialize in NXP USA Inc. PMR290UNE,115 electronic components. PMR290UNE,115 can be shipped within 24 hours after order. If you have any demands for PMR290UNE,115, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    PMR290UNE,115 Atribi pwodwi yo

    Nimewo Pati : PMR290UNE,115
    Manifakti : NXP USA Inc.
    Deskripsyon : MOSFET N-CH 20V 700MA SC-75
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 20V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 700mA (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V
    RD sou (Max) @ Id, Vgs : 380 mOhm @ 500mA, 4.5V
    Vgs (th) (Max) @ Id : 950mV @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 0.68nC @ 4.5V
    Vgs (Max) : ±8V
    Antre kapasite (Ciss) (Max) @ Vds : 83pF @ 10V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 250mW (Ta), 770mW (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : SC-75
    Pake / Ka : SC-75, SOT-416

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