Microsemi Corporation - APTM100A46FT1G

KEY Part #: K6524322

[3870PC Stock]


    Nimewo Pati:
    APTM100A46FT1G
    Manifakti:
    Microsemi Corporation
    Detaye deskripsyon:
    MOSFET 2N-CH 1000V 19A SP1.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Arrays, Transistors - Objektif espesyal, Transistors - IGBTs - Modil yo, Transistors - Pwogramasyon Unijunction and Tiristors - DIACs, SIDACs ...
    Avantaj konpetitif:
    We specialize in Microsemi Corporation APTM100A46FT1G electronic components. APTM100A46FT1G can be shipped within 24 hours after order. If you have any demands for APTM100A46FT1G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    APTM100A46FT1G Atribi pwodwi yo

    Nimewo Pati : APTM100A46FT1G
    Manifakti : Microsemi Corporation
    Deskripsyon : MOSFET 2N-CH 1000V 19A SP1
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : 2 N-Channel (Half Bridge)
    Karakteristik FET : Standard
    Drenaj nan Voltage Sous (Vdss) : 1000V (1kV)
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 19A
    RD sou (Max) @ Id, Vgs : 552 mOhm @ 16A, 10V
    Vgs (th) (Max) @ Id : 5V @ 2.5mA
    Chaje Gate (Qg) (Max) @ Vgs : 260nC @ 10V
    Antre kapasite (Ciss) (Max) @ Vds : 6800pF @ 25V
    Pouvwa - Max : 357W
    Operating Tanperati : -40°C ~ 150°C (TJ)
    Mounting Kalite : Chassis Mount
    Pake / Ka : SP1
    Pake Aparèy Founisè : SP1