DMG6602SVT-7 Pricing (USD) [885618PC Stock]
- 1 pcs$0.04176
- 3,000 pcs$0.03828
- Nimewo Pati:
- DMG6602SVT-7
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N/P-CH 30V TSOT23-6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Modil pouvwa chofè, Transistors - Bipolè (BJT) - RF, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMG6602SVT-7 electronic components. DMG6602SVT-7 can be shipped within 24 hours after order. If you have any demands for DMG6602SVT-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG6602SVT-7 Atribi pwodwi yo
Nimewo Pati :
DMG6602SVT-7
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N/P-CH 30V TSOT23-6
Seri :
-
Estati Pati :
Not For New Designs
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate, 4.5V Drive
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.4A, 2.8A
RD sou (Max) @ Id, Vgs :
60 mOhm @ 3.1A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
13nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
400pF @ 15V
Pouvwa - Max :
840mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
Pake Aparèy Founisè :
TSOT-23-6
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