[4073PC Stock]
- Nimewo Pati:
- IRFH4257DTRPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET 2N-CH 25V 25A 24PQFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Single, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFH4257DTRPBF electronic components. IRFH4257DTRPBF can be shipped within 24 hours after order. If you have any demands for IRFH4257DTRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH4257DTRPBF Atribi pwodwi yo
Nimewo Pati :
IRFH4257DTRPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2N-CH 25V 25A 24PQFN
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
25A
RD sou (Max) @ Id, Vgs :
3.4 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 35µA
Chaje Gate (Qg) (Max) @ Vgs :
15nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
1321pF @ 13V
Pouvwa - Max :
25W, 28W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-PowerVDFN
Pake Aparèy Founisè :
Dual PQFN (5x4)
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