[3807PC Stock]
- Nimewo Pati:
- BSO303PNTMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET 2P-CH 30V 8.2A 8DSO.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSO303PNTMA1 electronic components. BSO303PNTMA1 can be shipped within 24 hours after order. If you have any demands for BSO303PNTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSO303PNTMA1 Atribi pwodwi yo
Nimewo Pati :
BSO303PNTMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2P-CH 30V 8.2A 8DSO
Seri :
OptiMOS™
Estati Pati :
Obsolete
FET Kalite :
2 P-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
8.2A
RD sou (Max) @ Id, Vgs :
21 mOhm @ 8.2A, 10V
Vgs (th) (Max) @ Id :
2V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
72.5nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1761pF @ 25V
Pouvwa - Max :
2W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
P-DSO-8
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