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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. FDMS1D2N03DSD

ON Semiconductor - FDMS1D2N03DSD

KEY Part #: K6522132

FDMS1D2N03DSD Pricing (USD) [74089PC Stock]

  • 1 pcs$0.52775
Nimewo Pati:
FDMS1D2N03DSD
Manifakti:
ON Semiconductor
Detaye deskripsyon:
PT11N 30/12 PT11N 30/12.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Tiristors - SCR, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single, Tiristors - SCR - Modil yo, Tiristors - DIACs, SIDACs and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDMS1D2N03DSD electronic components. FDMS1D2N03DSD can be shipped within 24 hours after order. If you have any demands for FDMS1D2N03DSD, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMS1D2N03DSD Atribi pwodwi yo

Nimewo Pati : FDMS1D2N03DSD
Manifakti : ON Semiconductor
Deskripsyon : PT11N 30/12 PT11N 30/12
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual) Asymmetrical
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc)
RD sou (Max) @ Id, Vgs : 3.25 mOhm @ 19A, 10V, 0.97 mOhm @ 37A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 320µA, 3V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 33nC @ 10V, 117nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 1410pF @ 15V, 4860pF @ 15V
Pouvwa - Max : 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-PowerWDFN
Pake Aparèy Founisè : 8-PQFN (5x6)

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