Diodes Incorporated - DMN2008LFU-13

KEY Part #: K6522179

DMN2008LFU-13 Pricing (USD) [333337PC Stock]

  • 1 pcs$0.11096
  • 3,000 pcs$0.09860

Nimewo Pati:
DMN2008LFU-13
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET 2NCH 20V 14.5A UDFN2030.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - Bridge rèktifikateur, Diodes - Varyab kapasite (Varicaps, Varactors), Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMN2008LFU-13 electronic components. DMN2008LFU-13 can be shipped within 24 hours after order. If you have any demands for DMN2008LFU-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN2008LFU-13 Atribi pwodwi yo

Nimewo Pati : DMN2008LFU-13
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET 2NCH 20V 14.5A UDFN2030
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 14.5A
RD sou (Max) @ Id, Vgs : 5.4 mOhm @ 5.5A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 42.3nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 1418pF @ 10V
Pouvwa - Max : 1W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 6-UFDFN Exposed Pad
Pake Aparèy Founisè : U-DFN2030-6 (Type B)