Nimewo Pati :
SSM6N357R,LF
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
SMALL LOW R-ON MOSFETS DUAL NCH
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
650mA (Ta)
RD sou (Max) @ Id, Vgs :
1.8 Ohm @ 150mA, 5V
Vgs (th) (Max) @ Id :
2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
1.5nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
60pF @ 12V
Operating Tanperati :
150°C
Mounting Kalite :
Surface Mount
Pake / Ka :
6-SMD, Flat Leads
Pake Aparèy Founisè :
6-TSOP-F