DMN60H080DS-7 Pricing (USD) [885618PC Stock]
- 1 pcs$0.04176
- Nimewo Pati:
- DMN60H080DS-7
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 600V 80MA SOT23.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Single, Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN60H080DS-7 electronic components. DMN60H080DS-7 can be shipped within 24 hours after order. If you have any demands for DMN60H080DS-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN60H080DS-7 Atribi pwodwi yo
Nimewo Pati :
DMN60H080DS-7
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 600V 80MA SOT23
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
80mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
100 Ohm @ 60mA, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
1.7nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
25pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.1W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-23-3
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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