[12784PC Stock]
- Nimewo Pati:
- IRFI9530N
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET P-CH 100V 7.7A TO-220FP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Single, Modil pouvwa chofè, Transistors - IGBTs - Modil yo, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Single and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFI9530N electronic components. IRFI9530N can be shipped within 24 hours after order. If you have any demands for IRFI9530N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFI9530N Atribi pwodwi yo
Nimewo Pati :
IRFI9530N
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET P-CH 100V 7.7A TO-220FP
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7.7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
300 mOhm @ 4.6A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (Max) :
-
Antre kapasite (Ciss) (Max) @ Vds :
860pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB Full-Pak
Pake / Ka :
TO-220-3 Full Pack
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