LSIC1MO120E0120 Pricing (USD) [6344PC Stock]
- 1 pcs$6.49592
- Nimewo Pati:
- LSIC1MO120E0120
- Manifakti:
- Littelfuse Inc.
- Detaye deskripsyon:
- SIC MOSFET 1200V 27A TO247-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Diodes - Zener - Arrays, Diodes - Rèkteur - Arrays, Diodes - Bridge rèktifikateur, Modil pouvwa chofè, Tiristors - SCR - Modil yo, Transistors - IGBTs - Arrays and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in Littelfuse Inc. LSIC1MO120E0120 electronic components. LSIC1MO120E0120 can be shipped within 24 hours after order. If you have any demands for LSIC1MO120E0120, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
LSIC1MO120E0120 Atribi pwodwi yo
Nimewo Pati :
LSIC1MO120E0120
Manifakti :
Littelfuse Inc.
Deskripsyon :
SIC MOSFET 1200V 27A TO247-3
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
SiCFET (Silicon Carbide)
Drenaj nan Voltage Sous (Vdss) :
1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
27A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
20V
RD sou (Max) @ Id, Vgs :
150 mOhm @ 14A, 20V
Vgs (th) (Max) @ Id :
4V @ 7mA
Chaje Gate (Qg) (Max) @ Vgs :
80nC @ 20V
Vgs (Max) :
+22V, -6V
Antre kapasite (Ciss) (Max) @ Vds :
1125pF @ 800V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
139W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247-3
Pake / Ka :
TO-247-3
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