Vishay Siliconix - IRFR210PBF

KEY Part #: K6404457

IRFR210PBF Pricing (USD) [90796PC Stock]

  • 1 pcs$0.44319
  • 10 pcs$0.38632
  • 100 pcs$0.28191
  • 500 pcs$0.20882
  • 1,000 pcs$0.16706

Nimewo Pati:
IRFR210PBF
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 200V 2.6A DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Single, Tiristors - SCR, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Siliconix IRFR210PBF electronic components. IRFR210PBF can be shipped within 24 hours after order. If you have any demands for IRFR210PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFR210PBF Atribi pwodwi yo

Nimewo Pati : IRFR210PBF
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 200V 2.6A DPAK
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.5 Ohm @ 1.6A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 8.2nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 140pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta), 25W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D-Pak
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63