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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
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  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FQD12N20LTM-F085P

ON Semiconductor - FQD12N20LTM-F085P

KEY Part #: K6403223

FQD12N20LTM-F085P Pricing (USD) [134651PC Stock]

  • 1 pcs$0.27469
Nimewo Pati:
FQD12N20LTM-F085P
Manifakti:
ON Semiconductor
Detaye deskripsyon:
NMOS DPAK 200V 280 MOHM.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR, Diodes - Rèkteur - Single, Transistors - Objektif espesyal, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge rèktifikateur and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in ON Semiconductor FQD12N20LTM-F085P electronic components. FQD12N20LTM-F085P can be shipped within 24 hours after order. If you have any demands for FQD12N20LTM-F085P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQD12N20LTM-F085P Atribi pwodwi yo

Nimewo Pati : FQD12N20LTM-F085P
Manifakti : ON Semiconductor
Deskripsyon : NMOS DPAK 200V 280 MOHM
Seri : QFET®
Estati Pati : Not For New Designs
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V
RD sou (Max) @ Id, Vgs : 280 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 21nC @ 5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1080pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta), 55W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-252, (D-Pak)
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

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