Infineon Technologies - IRG8CH97K10F

KEY Part #: K6421858

IRG8CH97K10F Pricing (USD) [8287PC Stock]

  • 1 pcs$6.73830

Nimewo Pati:
IRG8CH97K10F
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT 1200V 100A DIE.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Modil pouvwa chofè, Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge rèktifikateur, Tiristors - SCR and Diodes - RF ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRG8CH97K10F Atribi pwodwi yo

Nimewo Pati : IRG8CH97K10F
Manifakti : Infineon Technologies
Deskripsyon : IGBT 1200V 100A DIE
Seri : -
Estati Pati : Active
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : -
Kouran - Pèseptè batman (Icm) : -
Vce (sou) (Max) @ Vge, Ic : 2V @ 15V, 100A
Pouvwa - Max : -
Oblije chanje enèji : -
Kalite Antre : Standard
Gate chaje : 600nC
Td (on / off) @ 25 ° C : 100ns/230ns
Kondisyon egzamen an : 600V, 100A, 1 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -
Mounting Kalite : Surface Mount
Pake / Ka : Die
Pake Aparèy Founisè : Die