STGWT80H65DFB Pricing (USD) [12469PC Stock]
- 1 pcs$3.30525
- 10 pcs$2.98486
- 100 pcs$2.47100
- 500 pcs$2.15172
- 1,000 pcs$1.87408
- Nimewo Pati:
- STGWT80H65DFB
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- IGBT 650V 120A 469W TO3P-3L.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Single, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - DIACs, SIDACs, Diodes - Zener - Arrays and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STGWT80H65DFB electronic components. STGWT80H65DFB can be shipped within 24 hours after order. If you have any demands for STGWT80H65DFB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STGWT80H65DFB Atribi pwodwi yo
Nimewo Pati :
STGWT80H65DFB
Manifakti :
STMicroelectronics
Deskripsyon :
IGBT 650V 120A 469W TO3P-3L
Seri :
-
Estati Pati :
Active
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
650V
Kouran - Pèseptè (Ic) (Max) :
120A
Kouran - Pèseptè batman (Icm) :
240A
Vce (sou) (Max) @ Vge, Ic :
2V @ 15V, 80A
Pouvwa - Max :
469W
Oblije chanje enèji :
2.1mJ (on), 1.5mJ (off)
Kalite Antre :
Standard
Gate chaje :
414nC
Td (on / off) @ 25 ° C :
84ns/280ns
Kondisyon egzamen an :
400V, 80A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
85ns
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-3P-3, SC-65-3
Pake Aparèy Founisè :
TO-3P
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