2SK2009TE85LF Pricing (USD) [498647PC Stock]
- 1 pcs$0.07418
- Nimewo Pati:
- 2SK2009TE85LF
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 30V 0.2A SMINI.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Tiristors - SCR - Modil yo, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Arrays and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage 2SK2009TE85LF electronic components. 2SK2009TE85LF can be shipped within 24 hours after order. If you have any demands for 2SK2009TE85LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2SK2009TE85LF Atribi pwodwi yo
Nimewo Pati :
2SK2009TE85LF
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 30V 0.2A SMINI
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
200mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V
RD sou (Max) @ Id, Vgs :
2 Ohm @ 50MA, 2.5V
Vgs (th) (Max) @ Id :
1.5V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
70pF @ 3V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
200mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SC-59-3
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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