Rohm Semiconductor - QS8K11TCR

KEY Part #: K6525418

QS8K11TCR Pricing (USD) [317720PC Stock]

  • 1 pcs$0.11642
  • 3,000 pcs$0.09841

Nimewo Pati:
QS8K11TCR
Manifakti:
Rohm Semiconductor
Detaye deskripsyon:
4V DRIVE NCHNCH MOSFET.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - DIACs, SIDACs, Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
We specialize in Rohm Semiconductor QS8K11TCR electronic components. QS8K11TCR can be shipped within 24 hours after order. If you have any demands for QS8K11TCR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

QS8K11TCR Atribi pwodwi yo

Nimewo Pati : QS8K11TCR
Manifakti : Rohm Semiconductor
Deskripsyon : 4V DRIVE NCHNCH MOSFET
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : -
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.5A
RD sou (Max) @ Id, Vgs : 50 mOhm @ 3.5A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 3.3nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds : 180pF @ 10V
Pouvwa - Max : 1.5W
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SMD, Flat Lead
Pake Aparèy Founisè : TSMT8