Manifakti :
Rohm Semiconductor
Deskripsyon :
4V DRIVE NCHNCH MOSFET
FET Kalite :
2 N-Channel (Dual)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.5A
RD sou (Max) @ Id, Vgs :
50 mOhm @ 3.5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
3.3nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
180pF @ 10V
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SMD, Flat Lead
Pake Aparèy Founisè :
TSMT8