[4664PC Stock]
- Nimewo Pati:
- PMGD175XN,115
- Manifakti:
- NXP USA Inc.
- Detaye deskripsyon:
- MOSFET 2N-CH 30V 0.9A 6TSSOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Bridge rèktifikateur, Modil pouvwa chofè, Transistors - Bipolè (BJT) - RF and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in NXP USA Inc. PMGD175XN,115 electronic components. PMGD175XN,115 can be shipped within 24 hours after order. If you have any demands for PMGD175XN,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMGD175XN,115 Atribi pwodwi yo
Nimewo Pati :
PMGD175XN,115
Manifakti :
NXP USA Inc.
Deskripsyon :
MOSFET 2N-CH 30V 0.9A 6TSSOP
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
900mA
RD sou (Max) @ Id, Vgs :
225 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
1.1nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
75pF @ 15V
Pouvwa - Max :
390mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-TSSOP, SC-88, SOT-363
Pake Aparèy Founisè :
6-TSSOP
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