Vishay Siliconix - SI3981DV-T1-E3

KEY Part #: K6523557

[4126PC Stock]


    Nimewo Pati:
    SI3981DV-T1-E3
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET 2P-CH 20V 1.6A 6-TSOP.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Single and Diodes - Rèkteur - Arrays ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix SI3981DV-T1-E3 electronic components. SI3981DV-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI3981DV-T1-E3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI3981DV-T1-E3 Atribi pwodwi yo

    Nimewo Pati : SI3981DV-T1-E3
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET 2P-CH 20V 1.6A 6-TSOP
    Seri : TrenchFET®
    Estati Pati : Obsolete
    FET Kalite : 2 P-Channel (Dual)
    Karakteristik FET : Logic Level Gate
    Drenaj nan Voltage Sous (Vdss) : 20V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.6A
    RD sou (Max) @ Id, Vgs : 185 mOhm @ 1.9A, 4.5V
    Vgs (th) (Max) @ Id : 1.1V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 5nC @ 4.5V
    Antre kapasite (Ciss) (Max) @ Vds : -
    Pouvwa - Max : 800mW
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : SOT-23-6 Thin, TSOT-23-6
    Pake Aparèy Founisè : 6-TSOP