IRF7389PBF Pricing (USD) [4113PC Stock]
- 1 pcs$0.61461
- 10 pcs$0.54437
- 100 pcs$0.43022
- 500 pcs$0.31559
- 1,000 pcs$0.24915
- Nimewo Pati:
- IRF7389PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N/P-CH 30V 8-SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - RF and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF7389PBF electronic components. IRF7389PBF can be shipped within 24 hours after order. If you have any demands for IRF7389PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7389PBF Atribi pwodwi yo
Nimewo Pati :
IRF7389PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N/P-CH 30V 8-SOIC
Seri :
HEXFET®
Estati Pati :
Discontinued at Digi-Key
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
-
RD sou (Max) @ Id, Vgs :
29 mOhm @ 5.8A, 10V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
33nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
650pF @ 25V
Pouvwa - Max :
2.5W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO
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