Infineon Technologies - AUIRF7342QTR

KEY Part #: K6525170

AUIRF7342QTR Pricing (USD) [106975PC Stock]

  • 1 pcs$0.34575
  • 4,000 pcs$0.31715

Nimewo Pati:
AUIRF7342QTR
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET 2P-CH 55V 3.4A 8SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in Infineon Technologies AUIRF7342QTR electronic components. AUIRF7342QTR can be shipped within 24 hours after order. If you have any demands for AUIRF7342QTR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AUIRF7342QTR Atribi pwodwi yo

Nimewo Pati : AUIRF7342QTR
Manifakti : Infineon Technologies
Deskripsyon : MOSFET 2P-CH 55V 3.4A 8SOIC
Seri : Automotive, AEC-Q101, HEXFET®
Estati Pati : Active
FET Kalite : 2 P-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.4A
RD sou (Max) @ Id, Vgs : 105 mOhm @ 3.4A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 38nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 690pF @ 25V
Pouvwa - Max : 2W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SO

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