ON Semiconductor - FQP19N20CTSTU

KEY Part #: K6410677

[14053PC Stock]


    Nimewo Pati:
    FQP19N20CTSTU
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET N-CH 200V 19A TO-220.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - Bipolè (BJT) - Arrays ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor FQP19N20CTSTU electronic components. FQP19N20CTSTU can be shipped within 24 hours after order. If you have any demands for FQP19N20CTSTU, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FQP19N20CTSTU Atribi pwodwi yo

    Nimewo Pati : FQP19N20CTSTU
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET N-CH 200V 19A TO-220
    Seri : QFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 200V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 19A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 170 mOhm @ 9.5A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 53nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 1080pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 139W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-220-3
    Pake / Ka : TO-220-3