Vishay Siliconix - SIHP25N60EFL-GE3

KEY Part #: K6399386

SIHP25N60EFL-GE3 Pricing (USD) [17846PC Stock]

  • 1 pcs$2.30927
  • 10 pcs$2.06027
  • 100 pcs$1.68942
  • 500 pcs$1.36802
  • 1,000 pcs$1.09459

Nimewo Pati:
SIHP25N60EFL-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 600V 25A TO220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - JFETs, Diodes - RF, Tiristors - DIACs, SIDACs and Transistors - IGBTs - Modil yo ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SIHP25N60EFL-GE3 electronic components. SIHP25N60EFL-GE3 can be shipped within 24 hours after order. If you have any demands for SIHP25N60EFL-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHP25N60EFL-GE3 Atribi pwodwi yo

Nimewo Pati : SIHP25N60EFL-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 600V 25A TO220AB
Seri : E
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 25A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 146 mOhm @ 12.5A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 75nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 2274pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 250W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3