[12612PC Stock]
- Nimewo Pati:
- IRFL9110
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET P-CH 100V 1.1A SOT223.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - TRIACs, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR - Modil yo and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRFL9110 electronic components. IRFL9110 can be shipped within 24 hours after order. If you have any demands for IRFL9110, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFL9110 Atribi pwodwi yo
Nimewo Pati :
IRFL9110
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 100V 1.1A SOT223
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.1A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.2 Ohm @ 660mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
8.7nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
200pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2W (Ta), 3.1W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-223
Pake / Ka :
TO-261-4, TO-261AA
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