Nimewo Pati :
IPP60R125P6XKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 600V TO220-3
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
30A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
125 mOhm @ 11.6A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 960µA
Chaje Gate (Qg) (Max) @ Vgs :
56nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
2660pF @ 100V
Disipasyon Pouvwa (Max) :
219W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PG-TO220-3