[9619PC Stock]
- Nimewo Pati:
- IRG7CH75UEF-R
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- IGBT 1200V ULTRA FAST DIE.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Diodes - Zener - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR - Modil yo, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRG7CH75UEF-R electronic components. IRG7CH75UEF-R can be shipped within 24 hours after order. If you have any demands for IRG7CH75UEF-R, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRG7CH75UEF-R Atribi pwodwi yo
Nimewo Pati :
IRG7CH75UEF-R
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT 1200V ULTRA FAST DIE
Seri :
-
Estati Pati :
Obsolete
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
-
Kouran - Pèseptè batman (Icm) :
-
Vce (sou) (Max) @ Vge, Ic :
2V @ 15V, 100A
Pouvwa - Max :
-
Oblije chanje enèji :
-
Kalite Antre :
Standard
Gate chaje :
770nC
Td (on / off) @ 25 ° C :
120ns/890ns
Kondisyon egzamen an :
600V, 100A, 5 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-40°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
Die
Pake Aparèy Founisè :
Die
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