NX7002BKMBYL Pricing (USD) [1696687PC Stock]
- 1 pcs$0.02672
- 10,000 pcs$0.02659
- Nimewo Pati:
- NX7002BKMBYL
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 60V SGL 3-DFN1006B.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs, Modil pouvwa chofè, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. NX7002BKMBYL electronic components. NX7002BKMBYL can be shipped within 24 hours after order. If you have any demands for NX7002BKMBYL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NX7002BKMBYL Atribi pwodwi yo
Nimewo Pati :
NX7002BKMBYL
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 60V SGL 3-DFN1006B
Seri :
TrenchMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
350mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V, 10V
RD sou (Max) @ Id, Vgs :
2.8 Ohm @ 200mA, 10V
Vgs (th) (Max) @ Id :
2.1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
1nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
23.6pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
350mW (Ta), 3.1W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DFN1006B-3
Pake / Ka :
3-XFDFN
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