IXTN102N65X2 Pricing (USD) [3922PC Stock]
- 1 pcs$12.14773
- 10 pcs$11.23827
- 100 pcs$9.59819
- Nimewo Pati:
- IXTN102N65X2
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 650V 76A X2 SOT-227.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Single, Transistors - Pwogramasyon Unijunction, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - RF and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in IXYS IXTN102N65X2 electronic components. IXTN102N65X2 can be shipped within 24 hours after order. If you have any demands for IXTN102N65X2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTN102N65X2 Atribi pwodwi yo
Nimewo Pati :
IXTN102N65X2
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 650V 76A X2 SOT-227
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
76A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
30 mOhm @ 51A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
152nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
10900pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
595AW (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SOT-227
Pake / Ka :
SOT-227-4, miniBLOC
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