Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET 2N-CH 30V 6A SOP8
Estati Pati :
Not For New Designs
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6A
RD sou (Max) @ Id, Vgs :
30 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
10.1nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds :
520pF @ 10V
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SMD, Gull Wing
Pake Aparèy Founisè :
8-SOP (5.0x6.0)