SQJ260EP-T1_GE3 Pricing (USD) [144991PC Stock]
- 1 pcs$0.25510
- Nimewo Pati:
- SQJ260EP-T1_GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET 2 N-CH 60V POWERPAK SO8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Diodes - Rèkteur - Arrays, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SQJ260EP-T1_GE3 electronic components. SQJ260EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ260EP-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJ260EP-T1_GE3 Atribi pwodwi yo
Nimewo Pati :
SQJ260EP-T1_GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2 N-CH 60V POWERPAK SO8
Seri :
Automotive, AEC-Q101, TrenchFET®
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
20A (Tc), 54A (Tc)
RD sou (Max) @ Id, Vgs :
19 mOhm @ 6A, 10V, 8.5 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
20nC @ 10V, 40nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1100pF @ 25V, 2500pF @ 25V
Pouvwa - Max :
27W (Tc), 48W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
PowerPAK® SO-8 Dual
Pake Aparèy Founisè :
PowerPAK® SO-8 Dual Asymmetric
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