SQ3585EV-T1_GE3 Pricing (USD) [49543PC Stock]
- 1 pcs$0.78921
- Nimewo Pati:
- SQ3585EV-T1_GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N/P-CH 20V 6TSOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal, Tiristors - DIACs, SIDACs, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Arrays, Diodes - RF and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SQ3585EV-T1_GE3 electronic components. SQ3585EV-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ3585EV-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQ3585EV-T1_GE3 Atribi pwodwi yo
Nimewo Pati :
SQ3585EV-T1_GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N/P-CH 20V 6TSOP
Seri :
Automotive, AEC-Q101, TrenchFET®
Estati Pati :
Active
FET Kalite :
N and P-Channel
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.57A (Tc), 2.5A (Tc)
RD sou (Max) @ Id, Vgs :
77 mOhm @ 1A, 4.5V, 166 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
2.5nC @ 4.5V, 3.5nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
-
Pouvwa - Max :
1.67W
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
Pake Aparèy Founisè :
6-TSOP
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