PSMN1R0-30YLDX Pricing (USD) [118378PC Stock]
- 1 pcs$0.31245
- 1,500 pcs$0.25215
- Nimewo Pati:
- PSMN1R0-30YLDX
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 30V 100A LFPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Arrays, Transistors - IGBTs - Arrays, Tiristors - SCR, Tiristors - SCR - Modil yo, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Single and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PSMN1R0-30YLDX electronic components. PSMN1R0-30YLDX can be shipped within 24 hours after order. If you have any demands for PSMN1R0-30YLDX, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PSMN1R0-30YLDX Atribi pwodwi yo
Nimewo Pati :
PSMN1R0-30YLDX
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 30V 100A LFPAK
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
1.02 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 2mA
Chaje Gate (Qg) (Max) @ Vgs :
121.35nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
8598pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
238W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
LFPAK56, Power-SO8
Pake / Ka :
SC-100, SOT-669
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