Infineon Technologies - IGC07T120T8LX1SA2

KEY Part #: K6421785

IGC07T120T8LX1SA2 Pricing (USD) [54689PC Stock]

  • 1 pcs$0.71495

Nimewo Pati:
IGC07T120T8LX1SA2
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT 1200V 4A SAWN ON FOIL.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Single and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Infineon Technologies IGC07T120T8LX1SA2 electronic components. IGC07T120T8LX1SA2 can be shipped within 24 hours after order. If you have any demands for IGC07T120T8LX1SA2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IGC07T120T8LX1SA2 Atribi pwodwi yo

Nimewo Pati : IGC07T120T8LX1SA2
Manifakti : Infineon Technologies
Deskripsyon : IGBT 1200V 4A SAWN ON FOIL
Seri : TrenchStop™
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : -
Kouran - Pèseptè batman (Icm) : 12A
Vce (sou) (Max) @ Vge, Ic : 2.02V @ 15V, 4A
Pouvwa - Max : -
Oblije chanje enèji : -
Kalite Antre : Standard
Gate chaje : -
Td (on / off) @ 25 ° C : -
Kondisyon egzamen an : -
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -40°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : Die
Pake Aparèy Founisè : Die